A COMBINED MAGNETO-OPTIC-MAGNETIC FORCE MICROSCOPE STUDY OF AMORPHOUS AND MULTILAYER FILMS

Polymerized LB Films Imaged with a Combined Atomic Force Microscope-Fluorescence Microscope

The first results obtained with a new stand-alone atomic force microscope (AFM) integrated with a standard Zeiss optical fluorescence microscope are presented. The optical microscope allows location and selection of objects to be imaged with the high-resolution AFM. Furthermore, the combined microscope enables a direct comparison between features observed in the fluorescence microscope and thos...

Combined Kerr microscope and magnetic force microscope for variable temperature ultrahigh vacuum investigations

Monitoring Multilayer Film Growth with the Atomic Force Microscope. Aluminum(III) Alkanebisphosphonate Multilayer Films and DNA Immobilization

The growth of aluminum(III) alkanebisphosphonate multilayer thin films on gold surfaces in aqueous solutions was investigated by probing the surface charge following alternate treatments with anionic phosphonate and cationic Al(III). This was accomplished by determining the force between a modified silica tip of an atomic force microscope (AFM) and the film-covered gold substrate. The AFM force...

Magnetic and Electerical Resistivity Behavior of Amorphous Ni Co P Films

Magnetic and Electrical Resistivity Study of Electroless Amorphous Ternary System (Ni-Co-P) show a qualitative dependence of crystalline phases formed during transformation on the annealing temperature and composition. Electrical Resistivity values increases with increase in cobalt content and samples with higher resistivity show lower temperature coefficients. The Initial increase in magnetiza...

MAGNETO-OPTICAL KERR EFFECTS OF AMORPHOUS Nd-Co FILMS

The complex off-diagonal components of conductivity tensor (g:, = 4, + i<,) of Co, a-Nd-Co and a-Y-Co was obtained by measuring magneto-optical Kerr effects, reflectivity and transmissivity in the range of fw = 0.8 eV 5eV. Nd-Co showed much greater wcr;, than Y-Co and the difference was deduced to be due to 4f T--t 5d 1. electron transition of Nd.